cam a22 u 4500 12857951X CHVBK 20200921061505.0 hz ||||-|||| 880212s1978 xxu |b 00 |eng|d R-78-922937-4 RADC-TR-78-200 UTRC-R-78-922937-4 (OCoLC)638457784 (NEBIS)000204519 ETH-BIB ger ETH-BIB ETHICS-ISBD Fabrication of sputtered aluminum nitride on sapphire for application in UHF saw frequency filters Mikroform final technical report, 1 Jul.77-1 Jun.78 by Edouard L.Paradis, Thomas M.Reeder; prep.: United technologies research Center, East Hartford - Conn Springfield - Va. 1978 1 Microfiche. ALUMINIUMNITRID (ANORGANISCHE CHEMIE) ger (ETHUDK)000017173 ethudk MIKROWELLEN, MW, 30 MHZ BIS 3 THZ (ELEKTROTECHNIK) ger (ETHUDK)000028056 ethudk SAPHIR (MINERALOGIE) ger (ETHUDK)000019755 ethudk u ALUMINIUMNITRID (ANORGANISCHE CHEMIE) ger 546.621'171.1 nebis E1 u SAPHIR (MINERALOGIE) ger 549.517.14 nebis E1 u MIKROWELLEN, MW, 30 MHZ BIS 3 THZ (ELEKTROTECHNIK) ger 621.3.029.6,1 nebis E1 u NITRURE D'ALUMINIUM (CHIMIE INORGANIQUE) fre 546.621'171.1 nebis E1 u ALUMINIUM NITRIDE (INORGANIC CHEMISTRY) eng 546.621'171.1 nebis E1 u SAPHIR (MINÉRALOGIE) fre 549.517.14 nebis E1 u SAPPHIRE (MINERALOGY) eng 549.517.14 nebis E1 u MICROWAVES, MW, 30 MHZ TO 3 THZ (ELECTRICAL ENGINEERING) eng 621.3.029.6,1 nebis E1 u MICRO-ONDES, MO, 30 MHZ À 3 THZ (ÉLECTROTECHNIQUE) fre 621.3.029.6,1 nebis E1 Paradis E.L. BK020000 XK020000 XK020000 1 MF Andere Mikroform = Autre microforme NEBIS E01 E01 RP MIKR: ADA063396 NEBIS 700 1- Paradis E.L.