cam a22 u 4500 128591226 CHVBK 20200921061907.0 880212s1979 xxu |b 00 |eng|d AD-A-076237 PRRL-79-CR-37 (OCoLC)638480007 (NEBIS)000223929 ETH-BIB ger ETH-BIB ETHICS-ISBD High-energy ion implantation for multigigabit-rate GaAs integrated circuit Mikroform annual report, 15 May 1978 - 14 May 1979 by S.G. Liu, E.C. Douglas, C.P. Wu ; prep.: RCA Laboratories, Princeton, N.J Springfield, Va. 1979 1 Microfiche GALLIUMARSENID-INTEGRIERTE SCHALTUNGEN (MIKROELEKTRONIK) ger (ETHUDK)000055231 ethudk u GALLIUMARSENID-INTEGRIERTE SCHALTUNGEN (MIKROELEKTRONIK) ger 621.3.049.779,5 nebis E1 u GALLIUM ARSENIDE INTEGRATED CIRCUITS (MICROELECTRONICS) eng 621.3.049.779,5 nebis E1 u CIRCUITS INTÉGRÉS EN ARSÉNIURE DE GALLIUM (MICROÉLECTRONIQUE) fre 621.3.049.779,5 nebis E1 Liu S.G. BK020000 XK020000 XK020000 1 MF Mikrofiche = Microfiche NEBIS E01 E01 RP MIKR: ADA076237 NEBIS 700 1- Liu S.G.