cam a22 u 4500 12869422X CHVBK 20200921121725.0 880212s1982 xxu | 10 |eng|d 0-8169-0226-7 (OCoLC)636421049 (NEBIS)000266029 ETH-BIB ger ETH-BIB ETHICS-ISBD Nucleation, growth and impurity effects in crystallization process engineering (papers selected from those presented at AIChE meetings; Houston - Tex.1981 & New Orleans - La.1981 & Orlando - Fla.1982) ed.: Mary Anne Farrell Epstein; contrib.: J.P.Barone a.o New York American Institute of chemical engineers 1982 90 p. fig.; tab.; diagr. AIChE symposium series no.215, vol.78 215 (NEBIS)000022594 126399727 KRISTALLCHEMIE ger (ETHUDK)000019596 ethudk KRISTALLISATION UND KRISTALLISATOREN (VERFAHRENSTECHNIK) ger (ETHUDK)000032790 ethudk KRISTALLZÜCHTUNG + KRISTALLWACHSTUM ger (ETHUDK)000019618 ethudk Konferenzschrift Houston (TX) 1981 1982 gnd-content Konferenzschrift New Orleans (LA) 1981 1982 gnd-content Konferenzschrift Orlando (FL) 1981 1982 gnd-content u KRISTALLISATION UND KRISTALLISATOREN (VERFAHRENSTECHNIK) ger 66.065.5 nebis E1 u KRISTALLZÜCHTUNG + KRISTALLWACHSTUM ger 548.52 nebis E1 u KRISTALLCHEMIE ger 548.3 nebis E1 u CRISTALLISATION + CRISTALLISOIRS (GÉNIE DES PROCÉDÉS) fre 66.065.5 nebis E1 u CRYSTALLIZATION AND CRYSTALLIZERS (PROCESS ENGINEERING) eng 66.065.5 nebis E1 u CRYSTALL GROWING + CRYSTAL GROWTH eng 548.52 nebis E1 u CROISSANCE DES CRISTAUX fre 548.52 nebis E1 u CRISTALLOCHIMIE fre 548.3 nebis E1 u CRYSTAL CHEMISTRY eng 548.3 nebis E1 Epstein M.A.F. American Institute of Chemical Engineers (DE-588)513-7 BK020800 XK020000 XK020000 Houston (TX) Kongress = Congrès 1981 1982 New Orleans (LA) Kongress = Congrès 1981 1982 Orlando (FL) Kongress = Congrès 1981 1982 NEBIS E16 E16 RH P C 181: 215 NEBIS 490 -- AIChE symposium series no.215, vol.78 215 (NEBIS)000022594 126399727 NEBIS 700 1- Epstein M.A.F. NEBIS 710 2- American Institute of Chemical Engineers (DE-588)513-7