The use of ion-induced X-rays to investigate the concentration distribution and atom location of boron-implanted silicon

Verfasser / Beitragende:
J.A. Cairns, R.S. Nelson, J.S. Briggs
Ort, Verlag, Jahr:
Harwell, Berkshire : AERE, 1971
Beschreibung:
4 S. : Ill.
Format:
Buch
ID: 328693677