The influence of channelling on radiation damage produced in silicon during ion bombardment

Verfasser / Beitragende:
R.S. Nelson, D.J. Mazey
Ort, Verlag, Jahr:
Harwell, Berkshire : UK Atomic Energy Authority Research Group, 1967
Beschreibung:
6 S. : Ill.
Format:
Buch
ID: 328831956