High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers
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| 003 | CHVBK | ||
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| 008 | 161128e20040401xx s 000 0 eng | ||
| 024 | 7 | 0 | |a 10.1524/zkri.219.4.187.30445 |2 doi |
| 035 | |a (NATIONALLICENCE)gruyter-10.1524/zkri.219.4.187.30445 | ||
| 245 | 0 | 0 | |a High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers |h [Elektronische Daten] |c [Steffi Deiter, Helvi Witek, Nikolay Oleynik, Jürgen Bläsing, Armin Dadgar, Alois Krost] |
| 520 | 3 | |a High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods. | |
| 540 | |a © 2004 Oldenbourg Wissenschaftsverlag GmbH | ||
| 690 | 7 | |a Crystallography |2 nationallicence | |
| 690 | 7 | |a Inorganic chemistry |2 nationallicence | |
| 690 | 7 | |a Organic chemistry |2 nationallicence | |
| 700 | 1 | |a Deiter |D Steffi |4 aut | |
| 700 | 1 | |a Witek |D Helvi |4 aut | |
| 700 | 1 | |a Oleynik |D Nikolay |4 aut | |
| 700 | 1 | |a Bläsing |D Jürgen |4 aut | |
| 700 | 1 | |a Dadgar |D Armin |4 aut | |
| 700 | 1 | |a Krost |D Alois |4 aut | |
| 773 | 0 | |t Zeitschrift für Kristallographie - Crystalline Materials |d De Gruyter Oldenbourg |g 219/4(2004-04-01), 187-190 |x 2194-4946 |q 219:4<187 |1 2004 |2 219 |o zkri | |
| 856 | 4 | 0 | |u https://doi.org/10.1524/zkri.219.4.187.30445 |q text/html |z Onlinezugriff via DOI |
| 908 | |D 1 |a research article |2 jats | ||
| 950 | |B NATIONALLICENCE |P 856 |E 40 |u https://doi.org/10.1524/zkri.219.4.187.30445 |q text/html |z Onlinezugriff via DOI | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Deiter |D Steffi |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Witek |D Helvi |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Oleynik |D Nikolay |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Bläsing |D Jürgen |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Dadgar |D Armin |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Krost |D Alois |4 aut | ||
| 950 | |B NATIONALLICENCE |P 773 |E 0- |t Zeitschrift für Kristallographie - Crystalline Materials |d De Gruyter Oldenbourg |g 219/4(2004-04-01), 187-190 |x 2194-4946 |q 219:4<187 |1 2004 |2 219 |o zkri | ||
| 900 | 7 | |b CC0 |u http://creativecommons.org/publicdomain/zero/1.0 |2 nationallicence | |
| 898 | |a BK010053 |b XK010053 |c XK010000 | ||
| 949 | |B NATIONALLICENCE |F NATIONALLICENCE |b NL-gruyter | ||