caa a22 4500 378939548 CHVBK 20180305123648.0 cr unu---uuuuu 161128e20040401xx s 000 0 eng 10.1524/zkri.219.4.187.30445 doi (NATIONALLICENCE)gruyter-10.1524/zkri.219.4.187.30445 High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers [Elektronische Daten] [Steffi Deiter, Helvi Witek, Nikolay Oleynik, Jürgen Bläsing, Armin Dadgar, Alois Krost] High quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods. © 2004 Oldenbourg Wissenschaftsverlag GmbH Crystallography nationallicence Inorganic chemistry nationallicence Organic chemistry nationallicence Deiter Steffi aut Witek Helvi aut Oleynik Nikolay aut Bläsing Jürgen aut Dadgar Armin aut Krost Alois aut Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 187-190 2194-4946 219:4<187 2004 219 zkri https://doi.org/10.1524/zkri.219.4.187.30445 text/html Onlinezugriff via DOI 1 research article jats NATIONALLICENCE 856 40 https://doi.org/10.1524/zkri.219.4.187.30445 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Deiter Steffi aut NATIONALLICENCE 700 1- Witek Helvi aut NATIONALLICENCE 700 1- Oleynik Nikolay aut NATIONALLICENCE 700 1- Bläsing Jürgen aut NATIONALLICENCE 700 1- Dadgar Armin aut NATIONALLICENCE 700 1- Krost Alois aut NATIONALLICENCE 773 0- Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 187-190 2194-4946 219:4<187 2004 219 zkri CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-gruyter