caa a22 4500 378939564 CHVBK 20180305123648.0 cr unu---uuuuu 161128e20040401xx s 000 0 eng 10.1524/zkri.219.4.195.30440 doi (NATIONALLICENCE)gruyter-10.1524/zkri.219.4.195.30440 Annealing studies of high Ge composition Si/SiGe multilayers [Elektronische Daten] [Mojmír Meduňa, Jiří Novák, Günther Bauer, Václav Holý, Claudiu Valentin Falub, Soichiro Tsujino, Elisabeth Müller, Detlev Grützmacher, Yves Campidelli, Olivier Kermarrec, Daniel Bensahel] For the design flexibility of SiGe based quantum cascade lasers high Ge composition Si/SiGe (x = 80%) superlattices are important. We present an X-ray small angle scattering and high-resolution X-ray diffraction study on strain compensated Si/Si1-xGex multiple quantum well structures with Ge compositions (x up to 80%), grown on Si0.5Ge0.5 pseudo-substrates. To test the temperature stability of such layers occurring in processing steps, in-situ annealing X-ray reflectivity measurements were performed for temperatures up to 810 °C. From the analysis of the reflectivity data, we obtain the layer thicknesses and the interface roughness of the superlattices during annealing. Using a one dimensional diffusion equation, the Ge diffusion coefficient for these conditions was obtained. Furthermore, the strain status and Ge composition in the superlattice structure and in the SiGe buffer before and after annealing were determined from the symmetrical and asymmetrical reciprocal space maps. © 2004 Oldenbourg Wissenschaftsverlag GmbH Crystallography nationallicence Inorganic chemistry nationallicence Organic chemistry nationallicence Meduňa Mojmír aut Novák Jiří aut Bauer Günther aut Holý Václav aut Falub Claudiu Valentin aut Tsujino Soichiro aut Müller Elisabeth aut Grützmacher Detlev aut Campidelli Yves aut Kermarrec Olivier aut Bensahel Daniel aut Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 195-200 2194-4946 219:4<195 2004 219 zkri https://doi.org/10.1524/zkri.219.4.195.30440 text/html Onlinezugriff via DOI 1 research article jats NATIONALLICENCE 856 40 https://doi.org/10.1524/zkri.219.4.195.30440 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Meduňa Mojmír aut NATIONALLICENCE 700 1- Novák Jiří aut NATIONALLICENCE 700 1- Bauer Günther aut NATIONALLICENCE 700 1- Holý Václav aut NATIONALLICENCE 700 1- Falub Claudiu Valentin aut NATIONALLICENCE 700 1- Tsujino Soichiro aut NATIONALLICENCE 700 1- Müller Elisabeth aut NATIONALLICENCE 700 1- Grützmacher Detlev aut NATIONALLICENCE 700 1- Campidelli Yves aut NATIONALLICENCE 700 1- Kermarrec Olivier aut NATIONALLICENCE 700 1- Bensahel Daniel aut NATIONALLICENCE 773 0- Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 195-200 2194-4946 219:4<195 2004 219 zkri CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-gruyter