Exact determination of Indium incorporation in (InxGa1-xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties
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| 024 | 7 | 0 | |a 10.1524/zkri.219.4.191.30443 |2 doi |
| 035 | |a (NATIONALLICENCE)gruyter-10.1524/zkri.219.4.191.30443 | ||
| 245 | 0 | 0 | |a Exact determination of Indium incorporation in (InxGa1-xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties |h [Elektronische Daten] |c [Fabian Schulze, Jürgen Bläsing, Armin Dadgar, Alois Krost] |
| 520 | 3 | |a We studied the structural and optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) on Si(111) grown by metal organic vapor phase epitaxy by means of photoluminescence, X-ray reflectometry (XRR), and high resolution X-ray diffractometry (HRXRD). The combination of both X-ray analysis methods allows a very precise determination of the structural parameters of the layer systems. In particular, the Indium incorporation and the well thickness of the optically active layers were investigated. Thus, in dependence on crystallographic quality and thicknesses, their error bars of determined values could be reduced to an accuracy of lower than 0.2 nm of well thickness and Δx = 0.02 of Indium proportion. By growing systematic series with various MOVPE deposition temperatures and times the correlations to the optical properties were determined. | |
| 540 | |a © 2004 Oldenbourg Wissenschaftsverlag GmbH | ||
| 690 | 7 | |a Crystallography |2 nationallicence | |
| 690 | 7 | |a Inorganic chemistry |2 nationallicence | |
| 690 | 7 | |a Organic chemistry |2 nationallicence | |
| 700 | 1 | |a Schulze |D Fabian |4 aut | |
| 700 | 1 | |a Bläsing |D Jürgen |4 aut | |
| 700 | 1 | |a Dadgar |D Armin |4 aut | |
| 700 | 1 | |a Krost |D Alois |4 aut | |
| 773 | 0 | |t Zeitschrift für Kristallographie - Crystalline Materials |d De Gruyter Oldenbourg |g 219/4(2004-04-01), 191-194 |x 2194-4946 |q 219:4<191 |1 2004 |2 219 |o zkri | |
| 856 | 4 | 0 | |u https://doi.org/10.1524/zkri.219.4.191.30443 |q text/html |z Onlinezugriff via DOI |
| 908 | |D 1 |a research article |2 jats | ||
| 950 | |B NATIONALLICENCE |P 856 |E 40 |u https://doi.org/10.1524/zkri.219.4.191.30443 |q text/html |z Onlinezugriff via DOI | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Schulze |D Fabian |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Bläsing |D Jürgen |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Dadgar |D Armin |4 aut | ||
| 950 | |B NATIONALLICENCE |P 700 |E 1- |a Krost |D Alois |4 aut | ||
| 950 | |B NATIONALLICENCE |P 773 |E 0- |t Zeitschrift für Kristallographie - Crystalline Materials |d De Gruyter Oldenbourg |g 219/4(2004-04-01), 191-194 |x 2194-4946 |q 219:4<191 |1 2004 |2 219 |o zkri | ||
| 900 | 7 | |b CC0 |u http://creativecommons.org/publicdomain/zero/1.0 |2 nationallicence | |
| 898 | |a BK010053 |b XK010053 |c XK010000 | ||
| 949 | |B NATIONALLICENCE |F NATIONALLICENCE |b NL-gruyter | ||