caa a22 4500 378939661 CHVBK 20180305123649.0 cr unu---uuuuu 161128e20040401xx s 000 0 eng 10.1524/zkri.219.4.191.30443 doi (NATIONALLICENCE)gruyter-10.1524/zkri.219.4.191.30443 Exact determination of Indium incorporation in (InxGa1-xN/GaN)-multiple quantum well structures by X-ray diffraction and -reflectivity and its impact on optical properties [Elektronische Daten] [Fabian Schulze, Jürgen Bläsing, Armin Dadgar, Alois Krost] We studied the structural and optical properties of InxGa1-xN/GaN multiple quantum wells (MQWs) on Si(111) grown by metal organic vapor phase epitaxy by means of photoluminescence, X-ray reflectometry (XRR), and high resolution X-ray diffractometry (HRXRD). The combination of both X-ray analysis methods allows a very precise determination of the structural parameters of the layer systems. In particular, the Indium incorporation and the well thickness of the optically active layers were investigated. Thus, in dependence on crystallographic quality and thicknesses, their error bars of determined values could be reduced to an accuracy of lower than 0.2 nm of well thickness and Δx = 0.02 of Indium proportion. By growing systematic series with various MOVPE deposition temperatures and times the correlations to the optical properties were determined. © 2004 Oldenbourg Wissenschaftsverlag GmbH Crystallography nationallicence Inorganic chemistry nationallicence Organic chemistry nationallicence Schulze Fabian aut Bläsing Jürgen aut Dadgar Armin aut Krost Alois aut Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 191-194 2194-4946 219:4<191 2004 219 zkri https://doi.org/10.1524/zkri.219.4.191.30443 text/html Onlinezugriff via DOI 1 research article jats NATIONALLICENCE 856 40 https://doi.org/10.1524/zkri.219.4.191.30443 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Schulze Fabian aut NATIONALLICENCE 700 1- Bläsing Jürgen aut NATIONALLICENCE 700 1- Dadgar Armin aut NATIONALLICENCE 700 1- Krost Alois aut NATIONALLICENCE 773 0- Zeitschrift für Kristallographie - Crystalline Materials De Gruyter Oldenbourg 219/4(2004-04-01), 191-194 2194-4946 219:4<191 2004 219 zkri CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-gruyter