caa a22 4500 388018437 CHVBK 20180307124917.0 cr unu---uuuuu 161130e199811 xx s 000 0 eng 10.1557/JMR.1998.0424 doi S0884291400046586 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0424 Diamond growth by hollow cathode arc plasma chemical vapor deposition [Elektronische Daten] Hollow cathode arc plasma chemical vapor deposition was employed to grow crystalline diamond films using 1.5% to 7% of methane in hydrogen. The growth rate was as high as 3.2 μ/h when using 5% CH4/H2 at a pressure of 15 Torr and a substrate temperature of 1083 K. However, an intermediate layer of several hundred nanometers was observed at the film-substrate interface by cross-section SEM. Raman and XPS characterizations showed that the interfacial layer consisted of sp2 carbon and TaC with Ta vaporized from the hot cathode tube. XRD and XPS results further showed that the deposited diamond films also contained TaC. Ta composition in the film increased with the increase of growth pressure, the reduction of substrate temperature, and the increase of H2 flow in the Ta tube. The diamond films deposited by using CHCl3 as carbon source had Ta concentrations one order of magnitude higher than those using CH4, as shown by XPS results, but the nucleation densities using CHCl3 were always higher than those using CH4. Copyright © Materials Research Society 1998 Liang Gou-Tsau Department of Chemical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China Hong Franklin Chau-Nan Department of Chemical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China Journal of Materials Research Cambridge University Press 13/11(1998-11), 3114-3121 0884-2914 13:11<3114 1998 13 JMR https://doi.org/10.1557/JMR.1998.0424 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0424 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liang Gou-Tsau Department of Chemical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China NATIONALLICENCE 700 1- Hong Franklin Chau-Nan Department of Chemical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/11(1998-11), 3114-3121 0884-2914 13:11<3114 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge