caa a22 4500 388018771 CHVBK 20180307124918.0 cr unu---uuuuu 161130e199806 xx s 000 0 eng 10.1557/JMR.1998.0215 doi S0884291400044514 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0215 Fabrication of on-chip barium strontium titanate capacitors by metallo-organic decomposition [Elektronische Daten] Metallo-organic thin film decomposition (MOD) was used in forming barium strontium titanate (BST) thin film capacitors on phosphorus doped polysilicon films deposited on 4 in. silicon wafers. A single step deposition process yielded highly uniform, crack-free BST films ranging up to 0.25 εm in thickness and having various step heights and dimensional area. Scanning electron microscopy (SEM) showed very good step coverage and planarization of the BST. The capacitors had capacitance densities above 200 nF/cm2, leakage current densities less than 1.55 εA/cm2 at a bias voltage of 10 V, and a dielectric breakdown field above 1 MVycm. Small temperature coefficients of capacitance and dissipation (tan δ) were also observed. Frequency response measurements were made using the BST capacitors and on-chip resistors in low pass and high pass circuit configurations. A plot of relative gain and phase angle versus frequency showed excellent agreement with predicted results. Copyright © Materials Research Society 1998 Catalan Antonio B. Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090-9055 Chang Shih-Chia Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090-9055 Poisson Roger J. Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904-9005 Baney William J. Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904-9005 Benci John E. Materials Science Department, Wayne State University, Detroit, Michigan 48202 Journal of Materials Research Cambridge University Press 13/6(1998-06), 1548-1552 0884-2914 13:6<1548 1998 13 JMR https://doi.org/10.1557/JMR.1998.0215 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0215 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Catalan Antonio B. Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090-9055 NATIONALLICENCE 700 1- Chang Shih-Chia Electrical and Electronics Engineering Department, General Motors Research and Development Laboratories, Warren, Michigan 48090-9055 NATIONALLICENCE 700 1- Poisson Roger J. Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904-9005 NATIONALLICENCE 700 1- Baney William J. Advanced Spec. MOS Department, Delco Electronics Corporation, Kokomo, Indiana 46904-9005 NATIONALLICENCE 700 1- Benci John E. Materials Science Department, Wayne State University, Detroit, Michigan 48202 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/6(1998-06), 1548-1552 0884-2914 13:6<1548 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge