caa a22 4500 388018909 CHVBK 20180307124918.0 cr unu---uuuuu 161130e199806 xx s 000 0 eng 10.1557/JMR.1998.0233 doi S0884291400044691 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0233 Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method [Elektronische Daten] In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2-1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR. Copyright © Materials Research Society 1998 Valkonen Mika P. Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland Lindroos Seppo Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland Kanniainen Tapio Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland Leskelä Markku Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland Resch Roland Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria Friedbacher Gernot Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria Grasserbauer Manfred Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria Journal of Materials Research Cambridge University Press 13/6(1998-06), 1688-1692 0884-2914 13:6<1688 1998 13 JMR https://doi.org/10.1557/JMR.1998.0233 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0233 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Valkonen Mika P. Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland NATIONALLICENCE 700 1- Lindroos Seppo Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland NATIONALLICENCE 700 1- Kanniainen Tapio Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland NATIONALLICENCE 700 1- Leskelä Markku Department of Chemistry, University of Helsinki, P.O. Box 55, FIN-00014 Helsinki, Finland NATIONALLICENCE 700 1- Resch Roland Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria NATIONALLICENCE 700 1- Friedbacher Gernot Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria NATIONALLICENCE 700 1- Grasserbauer Manfred Institute of Analytical Chemistry, Vienna University of Technology, Getreidemarkt 9/151, A-1060 Vienna, Austria NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/6(1998-06), 1688-1692 0884-2914 13:6<1688 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge