caa a22 4500 388019085 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0410 doi S0884291400046458 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0410 MoS2 deposited by ion beam assisted deposition: 2H or random layer structure? [Elektronische Daten] The structure of MoS2 films grown by ion beam assisted deposition is investigated using transmission electron microscopy. Films consist of stacks of S-Mo-S planes with a [001] texture; however, three-dimensional crystal symmetry is disrupted by a high density of planar defects. Selected area electron diffraction patterns show (hk0) and (00l) reflections, features similar to a random layer structure, as well as diffuse (103) reflections. It is suggested that these films do not have a true random layer structure, but rather a two-dimensional structure formed by nonrandom in-plane translations. Copyright © Materials Research Society 1998 Dunn D. N. Naval Research Laboratory, Code 6176, Washington, DC 20375 Seitzman L. E. Naval Research Laboratory, Code 6176, Washington, DC 20375 Singer I. L. Naval Research Laboratory, Code 6176, Washington, DC 20375 Journal of Materials Research Cambridge University Press 13/10(1998-10), 3001-3007 0884-2914 13:10<3001 1998 13 JMR https://doi.org/10.1557/JMR.1998.0410 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0410 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Dunn D. N. Naval Research Laboratory, Code 6176, Washington, DC 20375 NATIONALLICENCE 700 1- Seitzman L. E. Naval Research Laboratory, Code 6176, Washington, DC 20375 NATIONALLICENCE 700 1- Singer I. L. Naval Research Laboratory, Code 6176, Washington, DC 20375 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 3001-3007 0884-2914 13:10<3001 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge