caa a22 4500 388019107 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0408 doi S0884291400046434 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0408 Composition tunable memory and threshold switching in Al20AsxTe80−x semiconducting glasses [Elektronische Daten] I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples. Copyright © Materials Research Society 1998 Murugavel S. Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India Asokan S. Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India Journal of Materials Research Cambridge University Press 13/10(1998-10), 2982-2987 0884-2914 13:10<2982 1998 13 JMR https://doi.org/10.1557/JMR.1998.0408 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0408 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Murugavel S. Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India NATIONALLICENCE 700 1- Asokan S. Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 2982-2987 0884-2914 13:10<2982 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge