caa a22 4500 388019204 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0392 doi S0884291400046276 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0392 Fabrication of surface barrier layer capacitor on BaTiO3-based composite containing particulate SiC [Elektronische Daten] Surface reoxidized-type barrier layer (BL) capacitors were prepared by hot-pressing BaTiO3/SiC powder mixture in argon atmosphere and subsequently oxidizing the semiconducting BaTiO3-based composites with fine SiC particles. Dielectric properties, such as apparent relative dielectric constant, dielectric loss tangent, and Curie temperature, were investigated as a function of SiC content and oxidation procedures. Incorporating SiC particles into BaTiO3 matrix, a thin surface insulating layer was formed, which becomes thinner by increasing the SiC content. BL capacitors showing a higher capacitance than 3 × 102 nF/cm2 could be successfully fabricated. The results were discussed on the basis of high resolution transmission electron microscope (HRTEM) studies. Thin oxidized layer and the resulting high capacitance were associated with the depression of oxygen diffusion due to the presence of intergranular SiC particles. The thickness of the surface layer and some dielectric properties could be controlled by the SiC content as well as oxidation temperature and time. Copyright © Materials Research Society 1998 Hwang Hae Jin The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan Niihara Koichi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan Journal of Materials Research Cambridge University Press 13/10(1998-10), 2866-2870 0884-2914 13:10<2866 1998 13 JMR https://doi.org/10.1557/JMR.1998.0392 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0392 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hwang Hae Jin The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan NATIONALLICENCE 700 1- Niihara Koichi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 2866-2870 0884-2914 13:10<2866 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge