caa a22 4500 388019212 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0374 doi S0884291400046100 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0374 Multicrystalline silicon material: Effects of classical and rapid thermal processes [Elektronische Daten] For photovoltaic applications silicon is still the predominant material. Besides monocrystalline Czochralski wafers (Cz-Si), multicrystalline sheets (mc-Si) play an important role in terrestrial power applications (almost 50%). Large mc-Si ingots (up to 250 kg) are now produced in large scale by the industry using various directional solidification methods in appropriate crucibles (or molds). However, if the crystallographic properties are now quite satisfactory (columnar structure with large grains of more than 1 cm2, dislocations and intragrains defects), multicrystalline silicon contains larger quantities of impurities than single crystalline silicon which can have detrimental effects on the bulk minority carrier diffusion length (Ln,p). These impurities, including metals as well as high concentrations of carbon and/or oxygen, can degrade the photovoltaic properties of solar cells. Thermal treatments such as gettering, performed in a classical or rapid thermal furnace, studied separately or in conjunction with the doping steps can limit or avoid the degradation of the bulk diffusion length, but its efficiency is strongly dependent on the presence of these impurities in Si. Copyright © Materials Research Society 1998 Muller J. C. CNRS, Laboratoire de Physique et Applications des Semiconductors (UPR292), BP 20, 67037 Strasbourg Cedex 2, France Martinuzzi S. Laboratoire de Photoélectricité des Semiconducteurs (LPSC), Université Aix-Marseille, 13397 Marseille Cedex 13, France Journal of Materials Research Cambridge University Press 13/10(1998-10), 2721-2731 0884-2914 13:10<2721 1998 13 JMR https://doi.org/10.1557/JMR.1998.0374 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0374 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Muller J. C. CNRS, Laboratoire de Physique et Applications des Semiconductors (UPR292), BP 20, 67037 Strasbourg Cedex 2, France NATIONALLICENCE 700 1- Martinuzzi S. Laboratoire de Photoélectricité des Semiconducteurs (LPSC), Université Aix-Marseille, 13397 Marseille Cedex 13, France NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 2721-2731 0884-2914 13:10<2721 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge