caa a22 4500 388019247 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0402 doi S0884291400046379 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0402 Effects of Nd2O3 on the microwave dielectric properties of BiNbO4 ceramics [Elektronische Daten] Effects of Nd substitution with Bi on the microwave dielectric properties of BiNbO4 were studied. Bi1−xNdxNbO4 ceramics sintered at 920-980 °C consisted of orthorhombic and triclinic phases. The amount of triclinic phase increased with the increase in the Nd content, x, and sintering temperature. The apparent density and the dielectric constant decreased with the Nd content, but increased with sintering temperature, reached the peak values at 960 °C and then rapidly decreased. The Q × f0 value was between 11,000 and 13,000 GHz over all sintering temperatures for x < 0.05, but for x ≥ 0.05 it reached the peak value at 950 °C and then rapidly decreased. The temperature coefficient of resonance frequency increased in the positive direction with the Nd content and showed the minimum value of −1.82 ppm/°C for x = 0.025 sintered at 940 °C. However, it rapidly increased in the negative direction for sintering temperature over 960 °C. Copyright © Materials Research Society 1998 Choi Whan Ceramics Processing Center, Korea Institute of Science and Technology, Seoul, Korea Kim Kyung-Yong Ceramics Processing Center, Korea Institute of Science and Technology, Seoul, Korea Moon Myung-Rip Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do 445-743, Korea Bae Kyoo-Sik Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do 445-743, Korea Journal of Materials Research Cambridge University Press 13/10(1998-10), 2945-2949 0884-2914 13:10<2945 1998 13 JMR https://doi.org/10.1557/JMR.1998.0402 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0402 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Choi Whan Ceramics Processing Center, Korea Institute of Science and Technology, Seoul, Korea NATIONALLICENCE 700 1- Kim Kyung-Yong Ceramics Processing Center, Korea Institute of Science and Technology, Seoul, Korea NATIONALLICENCE 700 1- Moon Myung-Rip Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do 445-743, Korea NATIONALLICENCE 700 1- Bae Kyoo-Sik Department of Electronic Materials Engineering, The University of Suwon, Suwon, Kyunggi-do 445-743, Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 2945-2949 0884-2914 13:10<2945 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge