caa a22 4500 388019263 CHVBK 20180307124919.0 cr unu---uuuuu 161130e199810 xx s 000 0 eng 10.1557/JMR.1998.0378 doi S0884291400046148 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0378 Crystalline silicon thin films: A promising approach for photovoltaics? [Elektronische Daten] In this paper we review the achievements in the field of silicon crystalline thin film solar cells and correlate these with the different types of growth techniques and substrates. As a starting point we discuss the characteristics of photovoltaic devices based on the use of highly doped monocrystalline substrates as mechanical carriers for the thin films. These films are epitaxially deposited from the gas (CVD) or liquid phase (LPE). The comparison of both techniques is extended to growth on defective silicon substrates, i.e., multicrystalline wafers or silicon ribbons. The intrinsic grain boundary recombination activity in the thin films is assessed as a function of the deposition technique. Bulk passivation by hydrogenation considerably improves the recombination properties. The optimization of the hydrogen passivation conditions is looked at in conjunction with the used surface passivation process. This review is completed with the approaches to realize thin film cells on nonsilicon substrates, including recrystallization in solid and liquid phases. Copyright © Materials Research Society 1998 Slaoui A. Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France Monna R. Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France Poortmans J. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Vermeulen T. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Evrard O. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Said K. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Nijs J. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Journal of Materials Research Cambridge University Press 13/10(1998-10), 2763-2774 0884-2914 13:10<2763 1998 13 JMR https://doi.org/10.1557/JMR.1998.0378 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0378 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Slaoui A. Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France NATIONALLICENCE 700 1- Monna R. Laboratoire PHASE (UPR 292 CNRS), 23 rue du Loess, F-67037 Strasbourg cedex, France NATIONALLICENCE 700 1- Poortmans J. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium NATIONALLICENCE 700 1- Vermeulen T. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium NATIONALLICENCE 700 1- Evrard O. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium NATIONALLICENCE 700 1- Said K. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium NATIONALLICENCE 700 1- Nijs J. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/10(1998-10), 2763-2774 0884-2914 13:10<2763 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge