caa a22 4500 38801945X CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0482 doi S0884291400046963 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0482 Theory of the charged cluster formation in the low pressure synthesis of diamond: Part II. Free energy function and thermodynamic stability [Elektronische Daten] To account for the dominant formation of diamond over graphite in the gas-activated chemical vapor deposition (CVD) process we have theoretically examined the free energy function of a small carbon-atom cluster as a function of the cluster size. The scalar potential around a charged spherical cluster was derived using the linearized Poisson-Boltzmann equation. It was shown that the repulsive electrostatic energy associated with the growth of the charged diamond cluster was proportional to the fifth power of the cluster size. This suggests the existence of a deep potential-energy-well for the cluster size larger than the critical size corresponding to the free energy barrier for the nucleation. Thus, the growing diamond cluster will be trapped in this potential well before it transforms to the thermodynamically stable graphite. Considering all the relevant thermodynamic driving forces, we have constructed the free energy function in terms of the cluster size. The numerical computation also supports the existence of the potential-energy-well. Therefore, the present theoretical model clearly explains why the charged diamond cluster does not transform to the neutral graphite cluster when the thermodynamic stability is reversed above a certain critical size during the growth. Copyright © Materials Research Society 1998 Jang Hyun M. Department of Materials Science and Engineering, and Laboratory for Physics/Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea Hwang Nong M. Korea Research Institute of Standards and Science, P.O. Box 102, Daedok Science Town,Daejon 305-600, Republic of Korea Journal of Materials Research Cambridge University Press 13/12(1998-12), 3536-3549 0884-2914 13:12<3536 1998 13 JMR https://doi.org/10.1557/JMR.1998.0482 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0482 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jang Hyun M. Department of Materials Science and Engineering, and Laboratory for Physics/Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea NATIONALLICENCE 700 1- Hwang Nong M. Korea Research Institute of Standards and Science, P.O. Box 102, Daedok Science Town,Daejon 305-600, Republic of Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3536-3549 0884-2914 13:12<3536 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence SWISSBIB 38801945X BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge