caa a22 4500 388019492 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0479 doi S0884291400046938 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0479 Crystal structure and dielectric property of epitaxially grown (Ba, Sr)TiO3 thin film prepared by molecular chemical vapor deposition [Elektronische Daten] Epitaxially grown (Ba, Sr)TiO3 thin films were prepared on (100)MgO and (100)Pt ║ (100)MgO substrates by molecular chemical vapor deposition (MOCVD). The lattice parameter increased with increasing Ba/(Ba + Sr) ratio in the film and was higher than the reported value for bulk (Ba, Sr)TiO3. The dielectric constant at room temperature reached the maximum value at a lower Ba/(Ba + Sr) ratio compared to the reported one for bulk (Ba, Sr)TiO3. The temperature showing the maximum dielectric constant was higher than the reported value for bulk (Ba, Sr)TiO3. These results can be explained by the compressive stress applied to the film under the cooling process after the deposition. Copyright © Materials Research Society 1998 Funakubo Hiroshi Department of Inovative and Engineering Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology, 4259, Nagtsuda-cho, Midori-ku, Yokohama, 226 Japan Takeshima Yutaka Functional Materials Research Development, R & D Group, Murata Mag. Co. Ltd., Yasu-gun, Siga, 520-23, Japan Nagano Daisuke Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan Shinozaki Kazuo Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan Mizutani Nobuyasu Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan Journal of Materials Research Cambridge University Press 13/12(1998-12), 3512-3518 0884-2914 13:12<3512 1998 13 JMR https://doi.org/10.1557/JMR.1998.0479 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0479 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Funakubo Hiroshi Department of Inovative and Engineering Materials, Interdisciplinary Graduated School of Science and Engineering, Tokyo Institute of Technology, 4259, Nagtsuda-cho, Midori-ku, Yokohama, 226 Japan NATIONALLICENCE 700 1- Takeshima Yutaka Functional Materials Research Development, R & D Group, Murata Mag. Co. Ltd., Yasu-gun, Siga, 520-23, Japan NATIONALLICENCE 700 1- Nagano Daisuke Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan NATIONALLICENCE 700 1- Shinozaki Kazuo Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan NATIONALLICENCE 700 1- Mizutani Nobuyasu Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 2-12-1, Meguro-ku, O-okayama, Tokyo, 152, Japan NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3512-3518 0884-2914 13:12<3512 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge