caa a22 4500 388019506 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0468 doi S0884291400046823 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0468 The effect of oxygen partial pressure during cooling on lead zirconate titanate thin film growth by using rf magnetron sputtering method [Elektronische Daten] The lead zirconate titanate (PZT) thin film was deposited on platinized silicon wafer substrate by the rf magnetron sputtering method. In order to investigate the effect of cooling ambient, oxygen partial pressure was controlled during cooling PZT films. The PZT films cooled at lower oxygen partial pressure had perovskite phase and pyrochlore phase in both as-grown and postannealed films, but in the PZT films cooled at higher oxygen partial pressure, pyrochlore phases were not detected by XRD. As the oxygen partial pressure became lower during cooling, the capacitors had low values of remanent polarization and coercive field for as-grown films. The PZT capacitor with such a low value was recovered by postannealing in air, but its electrical properties had the same tendency before and after annealing. Microstructure was also affected by cooling ambient. Higher oxygen partial pressure on cooling reduced the number of very fine grains, and enhanced uniform grain distribution. Fatigue characteristics were also enhanced by cooling at higher oxygen partial pressure. However, the imprint was negligible irrespective of oxygen partial pressure upon cooling. The cooling procedure at higher oxygen ambients is believed to reduce the amounts of nonferroelectric second phases and oxygen vacancies. We find that oxygen partial pressure during cooling is a considerable process parameter. Therefore, care should be taken in treating the parameter after depositing films. Copyright © Materials Research Society 1998 Kim Dong Joo Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Kim Tae Song Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Lee Jeon Kook Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Jung Hyung Jin Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Journal of Materials Research Cambridge University Press 13/12(1998-12), 3442-3448 0884-2914 13:12<3442 1998 13 JMR https://doi.org/10.1557/JMR.1998.0468 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0468 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Dong Joo Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Kim Tae Song Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Lee Jeon Kook Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Jung Hyung Jin Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3442-3448 0884-2914 13:12<3442 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge