caa a22 4500 388019514 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0481 doi S0884291400046951 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0481 Theory of the charged cluster formation in the low pressure synthesis of diamond: Part I. Charge-induced nucleation [Elektronische Daten] Based on several experimental observations, Hwang et al. recently proposed "the charged cluster model” [J. Cryst. Growth, 162, 55-68 (1996)] to disentangle the "puzzling thermodynamic paradox” encountered in the gas-activated chemical vapor deposition (CVD) of diamond. Many unusual phenomena observed in the CVD diamond process can be successfully approached by the charged cluster model. However, there are a couple of important subjects still unsolved quantitatively. The first question is connected with the main driving force for this unusual nucleation in the gas phase. The second issue is related to the difference in the thermodynamic stability between graphite and diamond for a nanometer-sized cluster during the growth. In this study, we have theoretically examined the thermodynamic driving forces for the charge-induced nucleation, in general, and have applied this idea to the nucleation of the charged carbon-atom cluster. It was shown that the short-range ion-induced dipole interaction and the ion-solvation electrostatic effect (Born term) were mainly responsible for this unusual nucleation in the gas phase. The theoretical analysis presented in this article is quite generic and, thus, can be applied to any process that involves the charge-induced nucleation. Copyright © Materials Research Society 1998 Jang Hyun M. Department of Materials Science and Engineering, and Laboratory for Physics/Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea Hwang Nong M. Korea Research Institute of Standards and Science, P.O. Box 102, Daedok Science Town, Daejon 305-600, Republic of Korea Journal of Materials Research Cambridge University Press 13/12(1998-12), 3527-3535 0884-2914 13:12<3527 1998 13 JMR https://doi.org/10.1557/JMR.1998.0481 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0481 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jang Hyun M. Department of Materials Science and Engineering, and Laboratory for Physics/Chemistry of Dielectric Materials, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea NATIONALLICENCE 700 1- Hwang Nong M. Korea Research Institute of Standards and Science, P.O. Box 102, Daedok Science Town, Daejon 305-600, Republic of Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3527-3535 0884-2914 13:12<3527 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence SWISSBIB 38801945X BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge