caa a22 4500 388019549 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0486 doi S0884291400047002 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0486 A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy [Elektronische Daten] The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750-900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si: C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described. Copyright © Materials Research Society 1998 Kaiser U. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany Newcomb S. B. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom Stobbs W. M. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom Adamik M. Research Institute for Technical Physics, H-1325, P.O. Box 76, Budapest, Hungary Fissel A. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany Richter W. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany Journal of Materials Research Cambridge University Press 13/12(1998-12), 3571-3579 0884-2914 13:12<3571 1998 13 JMR https://doi.org/10.1557/JMR.1998.0486 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0486 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kaiser U. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany NATIONALLICENCE 700 1- Newcomb S. B. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom NATIONALLICENCE 700 1- Stobbs W. M. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom NATIONALLICENCE 700 1- Adamik M. Research Institute for Technical Physics, H-1325, P.O. Box 76, Budapest, Hungary NATIONALLICENCE 700 1- Fissel A. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany NATIONALLICENCE 700 1- Richter W. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3571-3579 0884-2914 13:12<3571 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence SWISSBIB 388019549 BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge