caa a22 4500 388019565 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0467 doi S0884291400046811 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0467 Structural and electrical properties of excess PbO doped Pb(Zr0.52Ti0.48)O3 thin films using rf magnetron sputtering method [Elektronische Daten] Well-crystallized Pb(Zr0.52Ti0.48)O3 thin films (4000 Å thickness) can be synthesized on Pt/Ti/SiO2/Si(100) substrate at a temperature as low as 520 °C. The polycrystalline lead zirconate titanate (PZT) perovskite phase formation was confirmed with x-ray diffraction (XRD) analysis, and growth morphologies were studied with a scanning electron microscope (SEM). The electrical properties of PZT thin films were characterized through P-E hysteresis curve, dielectric constant, and loss, fatigue, and leakage current measurements. Remanent polarization (Pr) and coercive field (Ec) of as-grown film were 8-30 μC/cm2 and 24-64 kV/cm with the variation of applied voltage (5-15 V). The post-annealing enhances the electrical properties even at 500 °C, which is below the as-grown temperatures (520 °C). The average polarization loss after applying rectangular pulse (Vp-p = 10 V) up to 1011 cycles was 40.9% for a 300 μm small dot and 22% for a 500 μm large dot, which are relatively improved values for platinum electrode. The values of dielectric constant (ε′) and tan δ measured with small signal sign wave (1 V, 10 kHz) were 1207 and 0.066 in the case of as-grown film. Copyright © Materials Research Society 1998 Kim Tae Song Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Kim Dong Joo Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Leea Jeon Kook Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Jung Hyung Jin Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea Journal of Materials Research Cambridge University Press 13/12(1998-12), 3436-3441 0884-2914 13:12<3436 1998 13 JMR https://doi.org/10.1557/JMR.1998.0467 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0467 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Tae Song Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Kim Dong Joo Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Leea Jeon Kook Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 700 1- Jung Hyung Jin Thin Film Technology Research Center, KIST, 39-1 Haweolgog-dong, Seongbuk-gu, Seoul 136-791, Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3436-3441 0884-2914 13:12<3436 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge