caa a22 4500 388019611 CHVBK 20180307124920.0 cr unu---uuuuu 161130e199812 xx s 000 0 eng 10.1557/JMR.1998.0473 doi S0884291400046872 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0473 Weight loss and gas evolution during sintering of silicon nitride powders synthesized by silica reduction and imide decomposition [Elektronische Daten] The relationships among weight loss, gas evolution, and other changes during sintering were investigated for silicon nitride powders synthesized by silica reduction and imide decomposition. Small weight losses were detected for all powders at low temperatures (below 1400 °C), and large weight losses were found to occur for the silica-reduction powders at high temperatures (1400-1800 °C). Only CO was detected in the sampled gases during sintering, and CO evolution peaks were seen at around 900-1200 (broad), 1400, and 1600 °C. The main deposited material around the samples was SiO. The weight losses at low temperatures were thought to be caused by evaporation of residual binder or adsorbed substances. The main causes of the large weight losses at high temperatures were thought to be CO and SiO evolutions, and CO evolution at around 1600 °C probably originated from the liquid phase accompanied by α-Si3N4 to β-Si3N4 transformation. Copyright © Materials Research Society 1998 Goto Yasuhiro Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan Ohnuma Yoshiyuki Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan Journal of Materials Research Cambridge University Press 13/12(1998-12), 3468-3472 0884-2914 13:12<3468 1998 13 JMR https://doi.org/10.1557/JMR.1998.0473 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0473 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Goto Yasuhiro Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan NATIONALLICENCE 700 1- Ohnuma Yoshiyuki Materials and Devices Research Laboratories, Research and Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/12(1998-12), 3468-3472 0884-2914 13:12<3468 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge