caa a22 4500 388019875 CHVBK 20180307124921.0 cr unu---uuuuu 161130e199804 xx s 000 0 eng 10.1557/JMR.1998.0139 doi S0884291400043764 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0139 Leakage current of Al- or Nb-doped Ba0.5Sr0.5TiO3 thin films by rf magnetron sputtering [Elektronische Daten] The effects of Al and Nb doping on the leakage current behaviors were studied for the Ba0.5Sr0.5TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si(100) substrate by rf magnetron sputtering. Al and Nb were selected as acceptor and donor dopants, respectively, because they have been known to replace Ti-sites of the BST perovskite. The BST thin films prepared in situ at elevated temperatures showed relatively high leakage current density and low breakdown voltage. However, the BST thin films deposited at room temperature and annealed subsequently in air showed improved electrical properties. In particular, the leakage current density of the Al-doped BST thin film was measured to be around 10−8 A/cm2 at 125 kV/cm, which is much lower than those of the undoped or Nb-doped thin films. The results suggest that the Schottky barriers at grain boundaries in the film interior could determine the leakage behavior in the BST thin films. Copyright © Materials Research Society 1998 In Tae-Gyoung Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, South Korea Baik Sunggi Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, South Korea Kim Sangsub Department of Materials Science and Metallurgical Engineering, Sunchon National University, 540-742, Sunchon, South Korea Journal of Materials Research Cambridge University Press 13/4(1998-04), 990-994 0884-2914 13:4<990 1998 13 JMR https://doi.org/10.1557/JMR.1998.0139 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0139 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- In Tae-Gyoung Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, South Korea NATIONALLICENCE 700 1- Baik Sunggi Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, South Korea NATIONALLICENCE 700 1- Kim Sangsub Department of Materials Science and Metallurgical Engineering, Sunchon National University, 540-742, Sunchon, South Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/4(1998-04), 990-994 0884-2914 13:4<990 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge