caa a22 4500 388019980 CHVBK 20180307124921.0 cr unu---uuuuu 161130e199804 xx s 000 0 eng 10.1557/JMR.1998.0131 doi S0884291400043685 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0131 Large size plasma generation using multicathode direct current geometry for diamond deposition [Elektronische Daten] The deposition area of diamond film is increased by applying a geometry of multiple cathodes and a single anode in direct current (dc) plasma assisted chemical vapor deposition (PACVD). Each cathode is made of Ta and connected independently to its own dc power supply. The operating pressure is 1.3 × 104 Pa (100 Torr), and methane-hydrogen mixed gas is used as reaction gas. The voltage and the current applied to each cathode are 650 V and 4 A, respectively. The transition from a diffuse glow to an arc is prevented by maintaining cathode temperatures above 2000 °C, which inhibits carbon deposition on the cathodes. Translucent diamond film of 3 in. diameter, thicker than 200 μm, is grown using seven cathodes with 3% CH4-H2 mixed gas for 110 h. The deposition area can be increased further by increasing the number of cathodes. Copyright © Materials Research Society 1998 Baik Young-Joon Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea Lee Jae-Kap Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea Lee Wook-Seong Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea Eun Kwang Yong Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea Journal of Materials Research Cambridge University Press 13/4(1998-04), 944-946 0884-2914 13:4<944 1998 13 JMR https://doi.org/10.1557/JMR.1998.0131 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0131 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Baik Young-Joon Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea NATIONALLICENCE 700 1- Lee Jae-Kap Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea NATIONALLICENCE 700 1- Lee Wook-Seong Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea NATIONALLICENCE 700 1- Eun Kwang Yong Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/4(1998-04), 944-946 0884-2914 13:4<944 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge