caa a22 4500 388020369 CHVBK 20180307124922.0 cr unu---uuuuu 161130e199809 xx s 000 0 eng 10.1557/JMR.1998.0368 doi S0884291400046045 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0368 Investigation of CF3I as an Environmentally Benign Dielectric Etchant [Elektronische Daten] In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFC's currently used in wafer patterning and CVD chamber cleaning processes. Dielectric films consisting of plasma enhanced chemically vapor deposited silicon dioxide and silicon nitride were comparatively etched in CF3I and C2F6/O2 plasma environments. The etch rate of these films was ascertained as a function of applied rf power, etchant gas flow rate, reaction chamber pressure, and CF3I: O2 ratio. Destruction efficiencies of CF3I at different processing parameters were evaluated. Depending on the flow rate, rf power, and chamber pressure, utilization efficiency of CF3I varied from as low as 10% to as high as 68%. CF4, C2F6, COF2, and CO2 were the predominant by-products found in the exhaust stream; however, their concentrations were very low compared to the traditional process employing C2F6/O2 mixtures. Copyright © Materials Research Society 1998 Levy R. A. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 Zaitsev V. B. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 Aryusook K. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 Ravindranath C. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 Sigal V. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 Misra A. Air Liquide Electronics Chemicals & Services, Dallas, Texas 75243 Kesari S. Air Liquide Electronics, Walnut Creek, California 94596 Rufin D. Air Liquide Electronics, Walnut Creek, California 94596 Sees J. Texas Instruments, M/S 301, Dallas, Texas 75243 Hall L. Texas Instruments, M/S 301, Dallas, Texas 75243 Journal of Materials Research Cambridge University Press 13/9(1998-09), 2643-2648 0884-2914 13:9<2643 1998 13 JMR https://doi.org/10.1557/JMR.1998.0368 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0368 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Levy R. A. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 NATIONALLICENCE 700 1- Zaitsev V. B. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 NATIONALLICENCE 700 1- Aryusook K. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 NATIONALLICENCE 700 1- Ravindranath C. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 NATIONALLICENCE 700 1- Sigal V. New Jersey Institute of Technology, University Heights, Newark, New Jersey 07102 NATIONALLICENCE 700 1- Misra A. Air Liquide Electronics Chemicals & Services, Dallas, Texas 75243 NATIONALLICENCE 700 1- Kesari S. Air Liquide Electronics, Walnut Creek, California 94596 NATIONALLICENCE 700 1- Rufin D. Air Liquide Electronics, Walnut Creek, California 94596 NATIONALLICENCE 700 1- Sees J. Texas Instruments, M/S 301, Dallas, Texas 75243 NATIONALLICENCE 700 1- Hall L. Texas Instruments, M/S 301, Dallas, Texas 75243 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/9(1998-09), 2643-2648 0884-2914 13:9<2643 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge