caa a22 4500 388020563 CHVBK 20180307124923.0 cr unu---uuuuu 161130e199809 xx s 000 0 eng 10.1557/JMR.1998.0347 doi S0884291400045830 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0347 Effect of the Nanoparticles on the Structure and Crystallization of Amorphous Silicon Thin Films Produced by rf Glow Discharge [Elektronische Daten] Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 °C substrate temperature using a silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy, and x-ray diffraction, which have shown the presence of ordered silicon clusters (1-2 nm) embedded in an amorphous silicon matrix. Because of the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing. Copyright © Materials Research Society 1998 Bertran E. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain Sharma S. N. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain Viera G. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain Costa J. Departament d'Enginyeria Industrial, Universitat de Girona, Av. Lluis Santaló S/N, E 17071 Girona, Spain St'ahel P. Laboratoire de Physique des Interfaces et des Couches Minces (CNRS, UPR 258), Ecole Polytechnique, F-91128 Palaiseau Cedex, France Cabarrocas P. Roca i. Laboratoire de Physique des Interfaces et des Couches Minces (CNRS, UPR 258), Ecole Polytechnique, F-91128 Palaiseau Cedex, France Journal of Materials Research Cambridge University Press 13/9(1998-09), 2476-2479 0884-2914 13:9<2476 1998 13 JMR https://doi.org/10.1557/JMR.1998.0347 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0347 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Bertran E. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain NATIONALLICENCE 700 1- Sharma S. N. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain NATIONALLICENCE 700 1- Viera G. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, E 08028 Barcelona, Spain NATIONALLICENCE 700 1- Costa J. Departament d'Enginyeria Industrial, Universitat de Girona, Av. Lluis Santaló S/N, E 17071 Girona, Spain NATIONALLICENCE 700 1- St'ahel P. Laboratoire de Physique des Interfaces et des Couches Minces (CNRS, UPR 258), Ecole Polytechnique, F-91128 Palaiseau Cedex, France NATIONALLICENCE 700 1- Cabarrocas P. Roca i. Laboratoire de Physique des Interfaces et des Couches Minces (CNRS, UPR 258), Ecole Polytechnique, F-91128 Palaiseau Cedex, France NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/9(1998-09), 2476-2479 0884-2914 13:9<2476 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge