caa a22 4500 388020687 CHVBK 20180307124923.0 cr unu---uuuuu 161130e199803 xx s 000 0 eng 10.1557/JMR.1998.0082 doi S0884291400043193 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0082 Semiconducting BaTiO3 ceramic prepared by low temperature liquid phase sintering [Elektronische Daten] Donor-doped BaTiO3 ceramics were prepared by adding PbO B2O3 SiO2 as a sintering aid. Semiconducting BaTiO3 was obtained at a sintering temperature of 1100 °C. The sintered samples exhibit the Positive Temperature Coefficient of Resistivity (PTCR) effect, which depends on the amount of liquid phase, the concentration of the donor-dopant, and the sintering temperature. The cold resistivity of the samples decreases when the sintering temperature increases. The increase of the grain boundary resistivity and hence of the cold resistivity at lower sintering temperatures was explained by applying the diffusion grain boundary layer model. Copyright © Materials Research Society 1998 Zajc I. JoŽef Stefan Institute, Jamova 39, Ljubljana, Slovenia Drofenik M. JoŽef Stefan Institute, Jamova 39, Ljubljana, Slovenia Journal of Materials Research Cambridge University Press 13/3(1998-03), 660-664 0884-2914 13:3<660 1998 13 JMR https://doi.org/10.1557/JMR.1998.0082 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0082 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zajc I. JoŽef Stefan Institute, Jamova 39, Ljubljana, Slovenia NATIONALLICENCE 700 1- Drofenik M. JoŽef Stefan Institute, Jamova 39, Ljubljana, Slovenia NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/3(1998-03), 660-664 0884-2914 13:3<660 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge