caa a22 4500 388020814 CHVBK 20180307124924.0 cr unu---uuuuu 161130e199803 xx s 000 0 eng 10.1557/JMR.1998.0086 doi S0884291400043235 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0086 A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition [Elektronische Daten] A nonfluorinated β-diketonate precursor, bis(t-butylacetoacetato)Cu(II) or Cu(tbaoac)2, was synthesized by modifying bis(dipivaloylmethanato)Cu(II) or Cu(dpm)2 for chemical vapor deposition (CVD) of copper. The complex was characterized by a variety of techniques, such as melting point determination, mass spectrometry, infraredspectroscopy, elemental analysis, thermogravimetric and differential thermal analysis, and x-ray diffraction. Cu(tbaoac)2 has a higher sublimation rate than Cu(dpm)2 over the temperature range 90-150 °C. Pyrolysis of Cu(tbaoac)2 leads to the formation of copper films at 225 °C, compared to 330 °C for Cu(dpm)2. As-deposited copper films ere highly dense, mirror-bright, adhered strongly to SiO2, and showed a resistivity of less than 2.9 μΩ-cm at a thickness as low as 1300 Å. A possible mechanism for the decomposition of the ligand tbaoac has been proposed. Copyright © Materials Research Society 1998 Devi Anjana Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India Goswami J. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India Lakshmi R. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India Shivashankar S. A. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India Chandrasekaran S. Department of Organic Chemistry, Indian Institute of Science, Bangalore-560 012 India Journal of Materials Research Cambridge University Press 13/3(1998-03), 687-692 0884-2914 13:3<687 1998 13 JMR https://doi.org/10.1557/JMR.1998.0086 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0086 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Devi Anjana Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India NATIONALLICENCE 700 1- Goswami J. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India NATIONALLICENCE 700 1- Lakshmi R. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India NATIONALLICENCE 700 1- Shivashankar S. A. Materials Research Centre, Indian Institute of Science, Bangalore-560 012 India NATIONALLICENCE 700 1- Chandrasekaran S. Department of Organic Chemistry, Indian Institute of Science, Bangalore-560 012 India NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/3(1998-03), 687-692 0884-2914 13:3<687 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge