caa a22 4500 388020822 CHVBK 20180307124924.0 cr unu---uuuuu 161130e199803 xx s 000 0 eng 10.1557/JMR.1998.0088 doi S0884291400043259 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0088 Passivation of nanocrystalline Al prepared by the gas phase condensation method: An x-ray photoelectron spectroscopy study [Elektronische Daten] Nanocrystalline aluminum powders have been prepared by the gas phase condensation method. Samples have been synthesized in a conventional preparation chamber for gas phase condensation and also in the pretreatment chamber of an XPS (x-ray photoelectron spectroscopy) spectrometer so that in situ studies of the passivation process of nanocrystalline aluminum can be performed. For the range of particle sizes (12-41 nm) studied in the present work, we found a universal behavior during passivation with oxygen of the nanocrystalline Al0. An Al2O3 overlayer of 4 nm, which protects the material from further oxidation, was obtained for all samples independently of the route of oxygen dosage. A careful analysis of the photoelectron parameters (binding energy and Auger parameters) for Al and O shows that in the early stages of passivation the alumina overlayer is so thin (<2.5 nm thickness) that the Al2O3 -Al interface induces an increase in the relaxation energy of the photoholes as compared to that of bulk alumina. Conclusions have been drawn about the best way to proceed during passivation of Al ultrafine particles before exposure to an air atmosphere. Copyright © Materials Research Society 1998 Sánchez-López J. C. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain González-Elipe A. R. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain Fernández A. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain Journal of Materials Research Cambridge University Press 13/3(1998-03), 703-710 0884-2914 13:3<703 1998 13 JMR https://doi.org/10.1557/JMR.1998.0088 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0088 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sánchez-López J. C. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain NATIONALLICENCE 700 1- González-Elipe A. R. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain NATIONALLICENCE 700 1- Fernández A. Instituto de Ciencia de Materiales de Sevilla (CSIC-Univ. de Sevilla), Centro de Investigaciones Cientificas "Isla de la Cartuja,” Avda. Américo Vespuccio, s/n. 41092 Sevilla, Spain NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/3(1998-03), 703-710 0884-2914 13:3<703 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge