caa a22 4500 388020849 CHVBK 20180307124924.0 cr unu---uuuuu 161130e199803 xx s 000 0 eng 10.1557/JMR.1998.0091 doi S0884291400043284 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0091 TiN prepared by plasma source ion implantation of nitrogen into Ti as a diffusion barrier for Si/Cu metallization [Elektronische Daten] A method of forming TiN films for Si/Cu metallization by using plasma source ion implantation (PSII) of nitrogen into Ti is described. The PSII process utilizes a dose of 1 × 1017 ions/cm2 and peak voltages of -10, -15, and -20 kV. The properties of such TiN films as diffusion barriers between Cu and Si were investigated by annealing Cu(2000 A)/TiN/Ti/Si films in vacuum from 500 °C to 700 °C, and by analyzing with four-point probe sheet resistance measurements, Rutherford backscattering spectrometry (RBS), and Auger electron spectroscopy (AES). The TiN films made at peak voltages of -15 and -20 kV were stable barriers against Cu diffusion after annealing at temperatures higher than 600 °C. Copyright © Materials Research Society 1998 Wang W. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 Booske J. H. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 Liu H. L. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 Gearhart S. S. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 Shohet J. L. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 Bedell S. Department of Physics, State University of New York-Albany, Albany, New York 12222 Lanford W. Department of Physics, State University of New York-Albany, Albany, New York 12222 Journal of Materials Research Cambridge University Press 13/3(1998-03), 726-730 0884-2914 13:3<726 1998 13 JMR https://doi.org/10.1557/JMR.1998.0091 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0091 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang W. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 NATIONALLICENCE 700 1- Booske J. H. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 NATIONALLICENCE 700 1- Liu H. L. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 NATIONALLICENCE 700 1- Gearhart S. S. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 NATIONALLICENCE 700 1- Shohet J. L. Engineering Research Center for Plasma-aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, Wisconsin 53706 NATIONALLICENCE 700 1- Bedell S. Department of Physics, State University of New York-Albany, Albany, New York 12222 NATIONALLICENCE 700 1- Lanford W. Department of Physics, State University of New York-Albany, Albany, New York 12222 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/3(1998-03), 726-730 0884-2914 13:3<726 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge