caa a22 4500 388021217 CHVBK 20180307124925.0 cr unu---uuuuu 161130e199801 xx s 000 0 eng 10.1557/JMR.1998.0007 doi S0884291400042448 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0007 VHF a-Si: H solar cells: A systematic material and cell study [Elektronische Daten] A systematic study of material quality has been performed for intrinsic a-Si:H layers deposited by plasma enhanced chemical vapor deposition at excitation frequencies between 30 and 80 MHz (VHF). The process conditions were optimized not only for "device quality” opto-electronic properties but also for a uniformity in layer thickness better than 5% over the 10 cm × 10 cm substrate area. We found optimized homogeneities at different pressures depending on the excitation frequency. The effect of frequency at these optimum conditions on the material quality is small. VHF-intrinsic layers have been used in a-Si:H p+-i-n+ solar cells, in which both the p+ and n+ layer were made using 13.56 MHz. There is a clear correlation between material quality and solar cell parameters. Material deposited at low power densities is of so-called "device quality,” which is confirmed by demonstrating an initial efficiency of 10% for cells deposited at 65 MHz using a low power density. The deposition rate still is 2-3 times higher than the one at 13.56 MHz. Light-soaking of the cell leads to stabilization at 6% for the best cells, which compares well to conventional 13.56 MHz cells. Copyright © Materials Research Society 1998 van Sark W. G. J. H. M. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands Bezemer J. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands van der Weg W. F. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands Journal of Materials Research Cambridge University Press 13/1(1998-01), 45-52 0884-2914 13:1<45 1998 13 JMR https://doi.org/10.1557/JMR.1998.0007 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0007 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- van Sark W. G. J. H. M. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands NATIONALLICENCE 700 1- Bezemer J. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands NATIONALLICENCE 700 1- van der Weg W. F. Department of Atomic and Interface Physics, Debye Institute, Utrecht University, P.O. Box 80000, NL-3508 TA Utrecht, The Netherlands NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/1(1998-01), 45-52 0884-2914 13:1<45 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge