caa a22 4500 38802142X CHVBK 20180307124925.0 cr unu---uuuuu 161130e199802 xx s 000 0 eng 10.1557/JMR.1998.0053 doi S0884291400042904 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0053 Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon [Elektronische Daten] X-ray diffraction, transmission electron microscopy, and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as-deposited and annealed polysilicon substrates. For both substrate types, the texture of the SiC films resembles the polysilicon at the onset of SiC growth. During the high temperature deposition process, the as-deposited polysilicon recrystallizes without influencing the crystallinity of the overlying SiC. An investigation of the SiC/polysilicon interface reveals that a heteroepitaxial relationship exists between polysilicon and SiC grains. From this study, a method to control the orientation of highly textured polycrystalline SiC films has been developed. Copyright © Materials Research Society 1998 Zorman Christian A. Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 Roy Shuvo Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 Wu Chien-Hung Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106 Fleischman Aaron J. Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 Mehregany Mehran Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 Journal of Materials Research Cambridge University Press 13/2(1998-02), 406-412 0884-2914 13:2<406 1998 13 JMR https://doi.org/10.1557/JMR.1998.0053 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0053 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zorman Christian A. Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 NATIONALLICENCE 700 1- Roy Shuvo Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 NATIONALLICENCE 700 1- Wu Chien-Hung Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106 NATIONALLICENCE 700 1- Fleischman Aaron J. Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 NATIONALLICENCE 700 1- Mehregany Mehran Department of Electrical Engineering and Applied Physics, Case Western Reserve University, Cleveland, Ohio 44106 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/2(1998-02), 406-412 0884-2914 13:2<406 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge