caa a22 4500 388021748 CHVBK 20180307124926.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0248 doi S0884291400044848 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0248 Formation of silicon carbide and amorphous carbon films by pulse biasing silicon to a high voltage in a methane electron cyclotron resonance microwave plasma [Elektronische Daten] Silicon was pulse biased to −45 kV in a methane plasma generated by microwave excitation in the electron cyclotron resonance (ECR) mode. Hydrocarbon ions were accelerated in the electrical field and implanted into the silicon. Rutherford backscattering (RBS) measurements showed that it is possible to incorporate a concentration of up to 95 at.% C into the Si. Cross-section transmission microscopy (XTEM) showed that the resulting surface layer was amorphous. Annealing at 1250 °C resulted in the formation of 10 to 60 nm thick, crystalline SiC layers. Copyright © Materials Research Society 1998 Volz K. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany Ensinger W. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany Reiber W. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany Rauschenbach B. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany Stritzker B. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany Journal of Materials Research Cambridge University Press 13/7(1998-07), 1765-1768 0884-2914 13:7<1765 1998 13 JMR https://doi.org/10.1557/JMR.1998.0248 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0248 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Volz K. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany NATIONALLICENCE 700 1- Ensinger W. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany NATIONALLICENCE 700 1- Reiber W. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany NATIONALLICENCE 700 1- Rauschenbach B. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany NATIONALLICENCE 700 1- Stritzker B. Universität Augsburg, Institut für Physik, 86135 Augsburg, Germany NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1765-1768 0884-2914 13:7<1765 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge