caa a22 4500 388021772 CHVBK 20180307124926.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0275 doi S0884291400045118 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0275 Evolution of stresses in passivated and unpassivated metal interconnects [Elektronische Daten] This paper discusses computational simulations of the evolution of stresses and deformation in unpassivated and SiO2-passivated Al lines on Si substrates. The finite element model accounts for elastic-plastic deformation in the Al lines during etching, passivation, and subsequent thermal cycling, by recourse to a generalized plane strain formulation within the context of a unit cell with appropriately constrained boundary conditions. The effects of different controlled variations in thermal history, and in the width, height, spacing, and yield behavior of the Al lines are analyzed; all these factors are seen to have potentially strong effects on the evolution of stresses within the lines. The predictions of the computations presented in this work are amenable for direct comparisons with experiments of curvature evolution along and perpendicular to the lines upon patterning, passivation, and thermal loading. The predicted stresses in metal interconnects can be directly used for reliability modeling purposes. Copyright © Materials Research Society 1998 Gouldstone A. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 Shen Y-L Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 Suresh S. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 Thompson C. V. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 Journal of Materials Research Cambridge University Press 13/7(1998-07), 1956-1966 0884-2914 13:7<1956 1998 13 JMR https://doi.org/10.1557/JMR.1998.0275 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0275 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gouldstone A. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 NATIONALLICENCE 700 1- Shen Y-L Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 NATIONALLICENCE 700 1- Suresh S. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 NATIONALLICENCE 700 1- Thompson C. V. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1956-1966 0884-2914 13:7<1956 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge