caa a22 4500 388021845 CHVBK 20180307124926.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0274 doi S0884291400045106 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0274 Solid-phase reactions in Ir/(111)Si systems studied by means of x-ray emission spectroscopy [Elektronische Daten] High energy resolved x-ray emission spectroscopy with variable electron beam excitation is applied for study of solid-phase reactions in the Ir/(111)Si system as a function of annealing temperature. The formation of Ir silicides as a function of depth is studied by measurements of Si L2,3 x-ray emission valence spectra at different electron excitation energies (3-10 keV), and the results are compared with those of Rutherford backscattering. Copyright © Materials Research Society 1998 Kurmaev E. Z. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia Galakhov V. R. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia Shamin S. N. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia Rodríguez T. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain Almendra A. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain Sanz-Maudes J. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain Göransson K. Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden Engström I. Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden Journal of Materials Research Cambridge University Press 13/7(1998-07), 1950-1955 0884-2914 13:7<1950 1998 13 JMR https://doi.org/10.1557/JMR.1998.0274 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0274 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kurmaev E. Z. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia NATIONALLICENCE 700 1- Galakhov V. R. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia NATIONALLICENCE 700 1- Shamin S. N. Institute of Metal Physics, Russian Academy of Science-Ural Division, 620219 Yekaterinburg GSP-170, Russia NATIONALLICENCE 700 1- Rodríguez T. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain NATIONALLICENCE 700 1- Almendra A. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain NATIONALLICENCE 700 1- Sanz-Maudes J. Dept. Tecnología Electrónica, ETSI Telecomunicación-Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain NATIONALLICENCE 700 1- Göransson K. Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden NATIONALLICENCE 700 1- Engström I. Institute of Chemistry, University of Uppsala, Box 531, S-751 21, Uppsala, Sweden NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1950-1955 0884-2914 13:7<1950 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge