caa a22 4500 388021861 CHVBK 20180307124926.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0253 doi S0884291400044897 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0253 Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations [Elektronische Daten] Gd-doped amorphous silicon films have been prepared by the electron beam evaporation technique, employing the experimental methods of dc conductivity temperature properties, ESR (electron spin resonance) spectra, and optical band gap Eopt measurements. We have investigated the optical and electrical properties of the films. The results show that at 290 K < T < 330 K, hopping conduction in Gd impurity states near Fermi level is predominant, and at 330 K < T < 500 K extended state conduction dominates due to electrons exited from the impurity states. At a Gd concentration of about 1.0 at.% spin density Ns, peak-peak width ΔBpp and line-shape factor l of ESR spectra change their dependence on Gd contents. The optical gap of the films narrows with increasing Gd contents in the films from 1.68 eV to 0.42 eV. The results were explained on the basis of the partial compensation of Gd atoms for dangling bonds . Copyright © Materials Research Society 1998 Gan Runjin Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China Liu Fengmin Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China Qi Li Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China Wang Jizheng Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China Journal of Materials Research Cambridge University Press 13/7(1998-07), 1795-1798 0884-2914 13:7<1795 1998 13 JMR https://doi.org/10.1557/JMR.1998.0253 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0253 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Gan Runjin Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China NATIONALLICENCE 700 1- Liu Fengmin Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China NATIONALLICENCE 700 1- Qi Li Department of Basic Science Courses, BIM, Beijing 100085, People's Republic of China NATIONALLICENCE 700 1- Wang Jizheng Department of Physics, Lanzhou University, Lanzhou 730000, People's Republic of China NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1795-1798 0884-2914 13:7<1795 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge