caa a22 4500 388021888 CHVBK 20180307124926.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0254 doi S0884291400044903 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0254 Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis of angle of incidence effects of ion beam nitridation of GaAs [Elektronische Daten] Ion beam nitridation (IBN) of GaAs at room temperature was studied as a function of N2 + ion incident angle at ion energy of 10 keV. The ion beam bombardment surface area of GaAs was characterized in situ by both Auger electron spectroscopy (AES) and small spot-size x-ray photoelectron spectroscopy (XPS). Thin GaN reaction layers are formed at all N2 + ion incident angles, whereas the formation of As-N bonds has not been found. However, the degree of nitridation of Ga decreases with increasing incident angle. The observed angular dependence of the N incorporation can be explained in terms of sputtering yield, indicating that the growth kinetics can be described as a dynamic process comprising the accumulation of N and sputter removal of the surface layer. N2 + ion bombardment causes the depletion of As from the surface region because of the preferential sputtering of As from GaAs. The preferential sputtering of As reduces with increasing N2 + ion incident angle. The angular dependent behavior of preferential sputtering of As by 10 keV N2 + ions can be attributed to the angular dependence of GaN surface layer formation. Copyright © Materials Research Society 1998 Pan J. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore Huan C. H. A. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore Wee A. T. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore Tan H. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore Tan K. L. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore Journal of Materials Research Cambridge University Press 13/7(1998-07), 1799-1807 0884-2914 13:7<1799 1998 13 JMR https://doi.org/10.1557/JMR.1998.0254 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0254 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pan J. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore NATIONALLICENCE 700 1- Huan C. H. A. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore NATIONALLICENCE 700 1- Wee A. T. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore NATIONALLICENCE 700 1- Tan H. S. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore NATIONALLICENCE 700 1- Tan K. L. Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, Republic of Singapore NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1799-1807 0884-2914 13:7<1799 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge