caa a22 4500 388021993 CHVBK 20180307124927.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0256 doi S0884291400044927 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0256 Silicon carbide grown by liquid phase epitaxy in microgravity [Elektronische Daten] 6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements. Copyright © Materials Research Society 1998 Yakimova R. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Syväjärvi M. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Lockowandt C. Swedish Space Corporation, PO Box 4207, S-171 04 Solna, Sweden Linnarsson M. K. Solid State Electronics, Royal Institute of Technology, S-164 40 Kista-Stockholm, Sweden Radamson H. H. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Janzén E. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Journal of Materials Research Cambridge University Press 13/7(1998-07), 1812-1815 0884-2914 13:7<1812 1998 13 JMR https://doi.org/10.1557/JMR.1998.0256 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0256 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yakimova R. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden NATIONALLICENCE 700 1- Syväjärvi M. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden NATIONALLICENCE 700 1- Lockowandt C. Swedish Space Corporation, PO Box 4207, S-171 04 Solna, Sweden NATIONALLICENCE 700 1- Linnarsson M. K. Solid State Electronics, Royal Institute of Technology, S-164 40 Kista-Stockholm, Sweden NATIONALLICENCE 700 1- Radamson H. H. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden NATIONALLICENCE 700 1- Janzén E. Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1812-1815 0884-2914 13:7<1812 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge