caa a22 4500 388022027 CHVBK 20180307124927.0 cr unu---uuuuu 161130e199807 xx s 000 0 eng 10.1557/JMR.1998.0241 doi S0884291400044770 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0241 Epitaxial growth of β-SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources [Elektronische Daten] Epitaxial β-SiC film has been grown on a mirror-polished Si(111) substrate using bias-assisted hot filament chemical vapor deposition (BA-HFCVD) at a substrate temperature of 1000 °C. A graphite plate was used as the only carbon source, and hydrogen was the only feeding gas to the deposition system. Atomic hydrogen, produced by hot filaments, reacted with the graphite to form hydrocarbon radicals which further reacted with the silicon substrate and deposited as β-SiC. The effect of negatively biasing the substrate is the key factor for epitaxial growth. Under the same growth conditions without negative bias, polycrystalline β-SiC resulted. Copyright © Materials Research Society 1998 Woo H. K. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong Lee C. S. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong Bello I. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong Lee S. T. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong Journal of Materials Research Cambridge University Press 13/7(1998-07), 1738-1740 0884-2914 13:7<1738 1998 13 JMR https://doi.org/10.1557/JMR.1998.0241 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0241 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Woo H. K. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong NATIONALLICENCE 700 1- Lee C. S. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong NATIONALLICENCE 700 1- Bello I. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong NATIONALLICENCE 700 1- Lee S. T. Department of Physics and Materials Science, Super-Diamond Laboratory, City University of Hong Kong, Hong Kong NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/7(1998-07), 1738-1740 0884-2914 13:7<1738 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge