caa a22 4500 388022124 CHVBK 20180307124927.0 cr unu---uuuuu 161130e199808 xx s 000 0 eng 10.1557/JMR.1998.0323 doi S0884291400045593 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0323 Growth of diamond and diamond-like films using a low energy ion beam [Elektronische Daten] Ion beam deposition provides an additional control of ion beam energy over the chemical vapor deposition methods. We have used a low energy ion beam of hydrogen and carbon to deposit carbon films on Si(100) wafers. We found that graphitic films, amorphous carbon films, and oriented diamond microcrystallites could be obtained separatedly at different ion beam energies. The mechanism of the formation of the oriented diamond microcrystallites was suggested to include three components: strain release after ion bombardment, hydrogen passivation of sp3 carbon, and hydrogen etching. Such a process can be extended to the heteroepitaxial growth of diamond films. Copyright © Materials Research Society 1998 Guo Y. P. Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong Lam K. L. Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong Lui K. M. Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, and Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong Kwok R. W. M. Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong Hui K. C. Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong Journal of Materials Research Cambridge University Press 13/8(1998-08), 2315-2320 0884-2914 13:8<2315 1998 13 JMR https://doi.org/10.1557/JMR.1998.0323 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0323 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Guo Y. P. Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong NATIONALLICENCE 700 1- Lam K. L. Department of Chemistry, The Chinese University of Hong Kong, Shatin, Hong Kong NATIONALLICENCE 700 1- Lui K. M. Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, and Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong NATIONALLICENCE 700 1- Kwok R. W. M. Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong NATIONALLICENCE 700 1- Hui K. C. Department of Chemistry, The Chinese University of Hong Kong, Shatin, and Materials Technology Research Centre, The Chinese University of Hong Kong, Shatin, Hong Kong NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/8(1998-08), 2315-2320 0884-2914 13:8<2315 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge