caa a22 4500 388022388 CHVBK 20180307124928.0 cr unu---uuuuu 161130e199808 xx s 000 0 eng 10.1557/JMR.1998.0319 doi S0884291400045556 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0319 Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate [Elektronische Daten] The kinetics of in situ crystallization of LaNiO3 thin films in sputtering deposition at temperatures ranging from 250 to 450 °C and isothermal crystallization of room-temperature (RT) sputtered LaNiO3 thin films in annealing at 350-500 °C were investigated by the x-ray diffraction method. The crystallization in both cases basically followed the Johnson-Mehl-Avrami (JMA) relation. However, different crystallization kinetics were observed. The transformation index and activation energy of crystallization in high temperature sputtering were about 1.5 and 33 kJ/mole, respectively, while in the annealing of RT-sputtered films, 1.0 and 63 kJ/mole were found. From the determined transformation index, it is suggested that the crystallization rate in high temperature sputtering was determined by a diffusion-controlled process of lateral growth with a decreasing nucleation rate of crystallites in the adsorption layer. However, the annealed films crystallized by an interface-controlled and one-dimensional growth of existing nuclei. Copyright © Materials Research Society 1998 Lee Hsin-Yi Research Division, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China, and Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China Wu Tai-Bor Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China Journal of Materials Research Cambridge University Press 13/8(1998-08), 2291-2296 0884-2914 13:8<2291 1998 13 JMR https://doi.org/10.1557/JMR.1998.0319 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0319 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Hsin-Yi Research Division, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan, Republic of China, and Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China NATIONALLICENCE 700 1- Wu Tai-Bor Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/8(1998-08), 2291-2296 0884-2914 13:8<2291 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge