caa a22 4500 388022469 CHVBK 20180307124928.0 cr unu---uuuuu 161130e199808 xx s 000 0 eng 10.1557/JMR.1998.0322 doi S0884291400045581 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0322 Growth kinetics of chemically vapor deposited SiO2 films from silane oxidation [Elektronische Daten] The growth kinetics of SiO2 thin films obtained by low-pressure chemical vapor deposition (CVD) from SiH4/O2/N2 gas mixtures has been determined at different temperatures and flow rates. The results show that the film growth is originated by some intermediate species (e.g., SiOxHy) produced in the gas phase. At low temperatures the deposition rate is limited by some homogeneous reaction with an apparent activation energy of 1.42 eV. Furthermore, the observation of critical limits when total pressure, oxygen/silane flow ratio, and temperature are decreased gives support to a branching-chain mechanism of deposition. Finally, we have observed that the deposition rate shows a hysteresis behavior when varying the temperature within the 300-400 °C range, which has been attributed to the inhibition of silane oxidation by the Si-OH surface groups of the films grown on the reactor walls. Copyright © Materials Research Society 1998 Ojeda Fernando Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain Castro-García Alejandro Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain Gómez-Aleixandre Cristina Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain Albella José María Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain Journal of Materials Research Cambridge University Press 13/8(1998-08), 2308-2314 0884-2914 13:8<2308 1998 13 JMR https://doi.org/10.1557/JMR.1998.0322 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0322 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ojeda Fernando Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain NATIONALLICENCE 700 1- Castro-García Alejandro Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain NATIONALLICENCE 700 1- Gómez-Aleixandre Cristina Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain NATIONALLICENCE 700 1- Albella José María Surface Science and Engineering Department, Materials Science Institute of Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/8(1998-08), 2308-2314 0884-2914 13:8<2308 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge