caa a22 4500 388022663 CHVBK 20180307124928.0 cr unu---uuuuu 161130e199805 xx s 000 0 eng 10.1557/JMR.1998.0198 doi S0884291400044344 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0198 Valence states analysis of Ca and Si in CaSi2 during CaSi2-H2O reaction [Elektronische Daten] The changes in the valence electron states of CaSi2 during the chemical reaction with H2O have been investigated by Auger Valence Electron Spectroscopy (AVES). In order to study the reaction process, the reaction was precisely controlled by applying dc voltage between Pt electrode and CaSi2 specimen. The Si[2s, 2p,V] Auger spectra of CaSi2 specimen remain unchanged under the applied voltage lower than −15 V relative to the Pt electrode in H2O. At higher applied voltage, 3p components of Si[2s, 2p, V] (V = 3s, 3p) Auger spectra get weak while the 3s components increase drastically. The peak position due to Ca[2p, 3p, 3p] transitions gradually shifted toward the lower energy side by raising the applied voltage. The peak shift is due to the formation of Ca-O bonds in CaSi2. A new peak, which arises from the split of the valence electron states in Ca atoms due to the Ca-O bonds, appeared in Ca[2p, 3p,V] Auger spectra for CaSi2 after the reaction with H2O. Copyright © Materials Research Society 1998 Abe S. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan Nakayama H. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan Nishino T. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan Iida S. Department of Electrical Electronics and Engineering, Osaka Sangyo University, 3-1-1, Nakagaito, Daito, Osaka 574-0013, Japan Journal of Materials Research Cambridge University Press 13/5(1998-05), 1401-1404 0884-2914 13:5<1401 1998 13 JMR https://doi.org/10.1557/JMR.1998.0198 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0198 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Abe S. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan NATIONALLICENCE 700 1- Nakayama H. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan NATIONALLICENCE 700 1- Nishino T. Graduate School of Science and Technology, and Faculty of Engineering, Kobe University, 1-1 Rokkoudai, Nada-ku, Kobe 657-8501, Japan NATIONALLICENCE 700 1- Iida S. Department of Electrical Electronics and Engineering, Osaka Sangyo University, 3-1-1, Nakagaito, Daito, Osaka 574-0013, Japan NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/5(1998-05), 1401-1404 0884-2914 13:5<1401 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge