caa a22 4500 388022892 CHVBK 20180307124929.0 cr unu---uuuuu 161130e199805 xx s 000 0 eng 10.1557/JMR.1998.0165 doi S0884291400044022 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0165 Cu films by partially ionized beam deposition for ultra large scale integration metallization [Elektronische Daten] Highly (111) oriented Cu films with a thickness around 1800 Å were prepared on Si(100) at room temperature by partially ionized beam deposition (PIBD) at pressure of 8 × 10-7-1 × 10-6 Torr. Effects of acceleration voltage (Va) between 0 and 4 kV on such properties as crystallinity, surface roughness, resistivity, etc. of the films have been investigated. The Cu films deposited by PIBD had only (111) and (200) planes, and the relative intensity ratio, I(111)/I(200) of the Cu films increased from 6.8 at Va = 0 kV to 37 at Va = 4 kV. There was no indication of impurities in the system from Auger electron spectroscopy (AES) analyses. A large increase in grain size of the films occurred with Va up to Va = 1 kV, but little increase occurred with Va > 1 kV. Surface roughness of the Cu films decreased with Va, and resistivity showed the same trends as that of the surface roughness. In the Cu films by PIBD, it is considered that changes of resistivity are mainly due to a surface scattering rather than a grain boundary scattering. The via holes, dimensions of which are 0.5 μm in diameter and 1.5 μm in depth, in the Cu films made at Va = 4 kV were completely filled without voids. Interface adhesion of the Cu film on Si(100) deposited at Va = 3 kV was five times greater than that of Cu film deposited at Va = 0 kV, as determined by a scratch test. Copyright © Materials Research Society 1998 Kim Ki-Hwan Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea Jang Hong-Gui Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea Han Sung Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea Jung Hyung-Jin Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea Koh Seok-Keun Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea Choi Doo-Jin Department of Ceramic Engineering, Yonsei University, Seoul 120-794, Korea Journal of Materials Research Cambridge University Press 13/5(1998-05), 1158-1163 0884-2914 13:5<1158 1998 13 JMR https://doi.org/10.1557/JMR.1998.0165 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0165 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Ki-Hwan Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea NATIONALLICENCE 700 1- Jang Hong-Gui Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea NATIONALLICENCE 700 1- Han Sung Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea NATIONALLICENCE 700 1- Jung Hyung-Jin Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea NATIONALLICENCE 700 1- Koh Seok-Keun Thin Film Technology Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheonryang, Seoul 130-650, Korea NATIONALLICENCE 700 1- Choi Doo-Jin Department of Ceramic Engineering, Yonsei University, Seoul 120-794, Korea NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/5(1998-05), 1158-1163 0884-2914 13:5<1158 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge