caa a22 4500 388022922 CHVBK 20180307124929.0 cr unu---uuuuu 161130e199805 xx s 000 0 eng 10.1557/JMR.1998.0187 doi S088429140004423X pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0187 Characterization of sputtered iridium dioxide thin films [Elektronische Daten] Iridium dioxide (IrO2) thin films, deposited on Si substrates by reactive rf sputtering method under various conditions, were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), electrical-conductivity, spectrophotometry, ellipsometry and Raman scattering measurements. The average grain sizes of the films were estimated by AFM. A grain boundary scattering model was used to fit the relation between the average grain size and electrical resistivity. The optical and dielectric constants were determined by the ellipsometry measurements. The results of the electrical and optical studies show a metallic character of the films deposited at higher temperatures. The results of XRD and Raman scattering indicate that the IrO2 films deposited at temperatures higher than 300 °C show the presence of (200) texture. Copyright © Materials Research Society 1998 Liao P. C. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China Ho W. S. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China Huang Y. S. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China Tiong K. K. Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China Journal of Materials Research Cambridge University Press 13/5(1998-05), 1318-1326 0884-2914 13:5<1318 1998 13 JMR https://doi.org/10.1557/JMR.1998.0187 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0187 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liao P. C. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China NATIONALLICENCE 700 1- Ho W. S. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China NATIONALLICENCE 700 1- Huang Y. S. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, Republic of China NATIONALLICENCE 700 1- Tiong K. K. Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan, Republic of China NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/5(1998-05), 1318-1326 0884-2914 13:5<1318 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge