caa a22 4500 388023007 CHVBK 20180307124929.0 cr unu---uuuuu 161130e199805 xx s 000 0 eng 10.1557/JMR.1998.0177 doi S0884291400044137 pii (NATIONALLICENCE)cambridge-10.1557/JMR.1998.0177 Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure [Elektronische Daten] Ferroelectric Ba0.7Sr0.3TiO3 thin films were successfully deposited on sapphire (r-cut) substrates by the sol-gel process, and the deposited films were annealed at various temperatures and for various soaking times. The compositional and structural characteristics of the films were systematically examined with the aid of x-ray diffraction, scanning electron microscopy, and medium energy ion scattering techniques. Their dependence on thermal processes was investigated. A planar capacitor structure based on the BSTO films was fabricated to evaluate the electrical and dielectric performance. These results, together with the microstructure characteristics, were analyzed and an optimal process was finally established. Copyright © Materials Research Society 1998 Wang Fan Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland Uusimäki Antti Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland Leppävuori Seppo Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland Karmanenko S. F. St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia Dedyk A. I. St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia Sakharov V. I. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia Serenkov I. T. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia Journal of Materials Research Cambridge University Press 13/5(1998-05), 1243-1248 0884-2914 13:5<1243 1998 13 JMR https://doi.org/10.1557/JMR.1998.0177 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1557/JMR.1998.0177 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Fan Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland NATIONALLICENCE 700 1- Uusimäki Antti Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland NATIONALLICENCE 700 1- Leppävuori Seppo Microelectronics Laboratory and EMPART Research Group of Infotech Oulu, University of Oulu, FIN-90570 Oulu, Finland NATIONALLICENCE 700 1- Karmanenko S. F. St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia NATIONALLICENCE 700 1- Dedyk A. I. St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia NATIONALLICENCE 700 1- Sakharov V. I. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia NATIONALLICENCE 700 1- Serenkov I. T. Ioffe Physico-Technical Institute, Russian Academy of Science, 194021 St. Petersburg, Russia NATIONALLICENCE 773 0- Journal of Materials Research Cambridge University Press 13/5(1998-05), 1243-1248 0884-2914 13:5<1243 1998 13 JMR CC0 http://creativecommons.org/publicdomain/zero/1.0 nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-cambridge